Additional Campus Affiliations
Professor, Electrical and Computer Engineering
Professor, Bioengineering
Professor, Nuclear, Plasma, and Radiological Engineering
Professor, Materials Science and Engineering
Professor, Micro and Nanotechnology Lab
Professor, Beckman Institute for Advanced Science and Technology
Affiliate, Carl R. Woese Institute for Genomic Biology
John Bardeen Faculty Scholar, Electrical and Computer Engineering
Recent Publications
Vesto, R., Choi, H., & Kim, K. (2025). Growth of F-doped BaBiO3 thin films via flow-limited field-injection electrostatic spraying toward experimental realization of wide bandgap topological insulator. Scripta Materialia, 262, Article 116656. https://doi.org/10.1016/j.scriptamat.2025.116656
Vesto, R., Pianfetti, M., Rzonca, G., Kelly, F., Wilson, R., Choi, H., & Kim, K. (2025). Phase-pure formamidinium lead iodide perovskite films deposited via flow-limited field-injection electrostatic spraying. AIP Advances, 15(2), Article 025318. https://doi.org/10.1063/5.0251605
Kelly, F. P., Landi, M. M., Vesto, R. E., Tadjer, M. J., Hobart, K. D., & Kim, K. (2024). Epitaxial growth of GaN on β-Ga2O3 via RF plasma nitridation. Journal of Applied Physics, 136(15), Article 155701. https://doi.org/10.1063/5.0233590
Landi, M. M., Kelly, F. P., Vesto, R. E., & Kim, K. (2024). Mechanistic study of β-Ga2O3 nitridation by RF nitrogen plasma for GaN heteroepitaxy. Journal of Applied Physics, 136(16), Article 165703. https://doi.org/10.1063/5.0233594
Landi, M. M., Kelly, F. P., Vesto, R. E., & Kim, K. (2024). Silicon nitride shadowed selective area growth of low defect density vertical GaN mesas via plasma-assisted molecular beam epitaxy. APL Materials, 12(10), Article 101104. https://doi.org/10.1063/5.0215738